 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| RQJ0601DGDQS Silicon P Channel MOS FET Power Switching REJ03G1266-0300 Rev.3.00 Jun 05, 2006 Features * Low on-resistance RDS(on) = 124 m typ (VGS = -10 V, ID = -1.4 A) * Low drive current * High speed switching * 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 2, 4 D 2 3 1G 4 S 3 1 1. Gate 2. Drain 3. Source 4. Drain Note: Marking is "DG". *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Symbol VDSS VGSS ID Ratings -60 +10 / -20 -2.8 -4.2 -2.8 1.5 5 150 -55 to +150 Unit V V A A A W W C C Drain peak current ID (pulse)Note1 Body - drain diode reverse drain current IDR Channel dissipation Pch Note2 Channel dissipation Pch (pulse)Note1 Channel temperature Tch Storage temperature Tstg Notes: 1. PW 1 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Rev.3.00 Jun 05, 2006 page 1 of 6 RQJ0601DGDQS Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min -60 +10 -20 -- -- -- -1.0 -- -- 2.5 -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- 124 150 4.1 590 75 36 20 41 43 78 9.6 1.3 1.5 -0.8 Max -- -- -- +10 -10 -1 -2.0 155 210 -- -- -- -- -- -- -- -- -- -- -- -- Unit V V V A A A V m m S pF pF pF ns ns ns ns nC nC nC V Test conditions ID = -10 mA, VGS = 0 IG = +100 A, VDS = 0 IG = -100 A, VDS = 0 VGS = +8 V, VDS = 0 VGS = -16 V, VDS = 0 VDS = -60 V, VGS = 0 VDS = -10 V, ID = -1 mA ID = -1.4 A, VGS = -10 VNote3 ID = -1.4 A, VGS = -4.5 VNote3 ID = -1.4 A, VDS = -10 VNote3 VDS = -10 V, VGS = 0, f = 1 MHz ID = -1 A, VGS = -10 V, RL = 10 , Rg = 4.7 VDD = -10 V, VGS = -10 V, ID = -2.8 A IF = -1.5 A, VGS = 0Note3 Rev.3.00 Jun 05, 2006 page 2 of 6 RQJ0601DGDQS Main Characteristics Maximum Channel Power Dissipation Curve 2.0 -100 Operation in this area is limited by RDS(on) -10 100 s PW 1 m s = 10 m s Maximum Safe Operation Area Channel Dissipation Pch (W) 1.5 Drain Current ID (A) 1.0 -1 DC O pe ra tio n 0.5 -0.1 Ta = 25C 1 Shot Pulse 0 0 25 50 75 100 125 150 -0.01 -0.01 -0.1 -1 -10 -100 Ambient Temperature Ta (C) *When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Drain to Source Voltage VDS (V) Typical Output Characteristics -2.5 -3 V -10 V -2.5 Pulse Test Tc = 25C Typical Transfer Characteristics (1) VDS = -10 V Pulse Test -2.7 V Drain Current ID (A) Drain Current ID (A) -2.0 -2.0 -1.5 -2.5 V -1.0 -2.3 V -1.5 -1.0 -0.5 -0.5 0 25C Tc = 75C -25C 0 VGS = 0 V 0 -2 -4 -6 -8 -10 0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Gate to Source Cutoff Voltage vs. -0.1 VDS = -10 V Pulse Test Gate to Source Cutoff Voltage VGS(off) (V) Typical Transfer Characteristics (2) Case Temperature -2.5 Drain Current ID (A) Tc = 75C -0.01 -2 ID = -10 mA -1.5 -1 mA -100 A VDS = -10 V Pulse Test 0 25 50 75 100 125 150 25C -0.001 -1 -25C -0.0001 0 -0.5 -1 -1.5 -2 -2.5 -3 -0.5 -25 Gate to Source Voltage VGS (V) Case Temperature Tc (C) Rev.3.00 Jun 05, 2006 page 3 of 6 RQJ0601DGDQS Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS(on) (V) Drain to Source on State Resistance RDS(on) () -0.8 1 Pulse Test Tc = 25C Pulse Test Tc = 25C -0.6 VDS = -4.5 V 0.1 -10 V -0.4 -0.2 A -0.2 -1.5 A -1 A -0.5 A 0 0 -5 -10 -15 -20 0.01 -0.1 -1 -10 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature Static Drain to Source on State Resistance vs. Case Temperature Drain to Source on State Resistance RDS(on) (m) 300 Pulse Test VGS = -4.5 V 250 -1 A Drain to Source on State Resistance RDS(on) (m) 250 Pulse Test VGS = -10 V 200 ID = -1.5 A 200 -0.5 A -0.2 A 150 150 100 ID = -0.2 A, -0.5 A, -1 A, -1.5 A 50 -25 100 -25 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Case Temperature Tc (C) Case Temperature Tc (C) Zero Gate Voltage Drain current IDSS (nA) Forward Transfer Admittance vs. Drain Current Zero Gate Voltage Drain current vs. Case Temperature -1000 Pulse Test VGS = 0 V VDS = -60 V -100 Forward Transfer Admittance |yfs| (S) 10 -25C 25C 1 Tc = 75C -10 0.1 -0.1 Pulse Test VDS = -10 V -1.0 -10.0 -1 -25 0 25 50 75 100 125 150 Drain Current ID (A) Case Temperature Tc (C) Rev.3.00 Jun 05, 2006 page 4 of 6 RQJ0601DGDQS Dynamic Input Characteristics Drain to Source Voltage VDS (V) VDD = -10 V -20 -25 V -50 V -60 VDS -4 Switching Characteristics Gate to Source Voltage VGS (V) 0 1000 0 Switching Time t (ns) tf 100 td(off) td(on) 10 tr VDD = -10 V VGS = -10 V Rg = 4.7 PW = 5 s Tc = 25C -0.1 -1 -10 VGS -8 -40 VDD = -50 V -25 V -12 -80 ID = -2.8 A Tc = 25C 0 4 8 -10 V -16 -100 -20 1 -0.01 12 16 20 Gate Charge Qg (nC) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 1000 Ciss 900 Input Capacitance vs. Gate to Source Voltage Ciss, Coss, Crss (pF) 850 100 Ciss (pF) Coss Crss 10 800 750 700 VGS = 0 V f = 1 MHz VDS = 0 V f = 1 MHz 0 2 4 6 8 10 1 -0 -10 -20 -30 -40 -50 -60 650 -10 -8 -6 -4 -2 Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage -2.5 Gate to Source Voltage VGS (V) Body-Drain Diode Forward Voltage vs. Case Temperature -0.9 Body-Drain Diode Forward Voltage VSDF (V) Reverse Drain Current IDR (A) -10V -2 Pulse Test Tc = 25C VGS = 0 -0.8 ID = -1 A -0.7 -0.6 -0.5 -0.4 -0.3 -1.5 -5V -1 -10 mA -0.5 VGS = 0 V, 5 V 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -25 0 25 50 75 100 125 150 Source Drain Voltage VSD (V) Case Temperature Tc (C) Rev.3.00 Jun 05, 2006 page 5 of 6 RQJ0601DGDQS Package Dimensions Package Name UPAK JEITA Package Code SC-62 RENESAS Code PLZZ0004CA-A Previous Code UPAK / UPAKV MASS[Typ.] 0.050g Unit: mm 4.5 0.1 1.5 1.5 3.0 Ordering Information Part Name RQJ0601DGDQSTL-E Quantity 1000 pcs. Shipping Container 178 reel, 12 mm Emboss taping Rev.3.00 Jun 05, 2006 page 6 of 6 0.8 Min 0.44 Max (0.4) 0.53 Max 0.48 Max (2.5) 1 2.5 0.1 4.25 Max 0.4 1.8 Max 1.5 0.1 0.44 Max (1.5) (0.2) Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .6.0 |
Price & Availability of RQJ0601DGDQS
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |